ST(D, P, U)11N65M2 دیتاشیت

ST(D, P, U)11N65M2

مشخصات دیتاشیت

نام دیتاشیت ST(D, P, U)11N65M2
حجم فایل 775.53 کیلوبایت
نوع فایل pdf
تعداد صفحات 27

مشاهده دیتاشیت ST(D, P, U)11N65M2

دانلود دیتاشیت

سایر مستندات

STU11N65M2 27 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STU11N65M2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 85W
  • Total Gate Charge (Qg@Vgs): 12.5nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 410pF@100V
  • Continuous Drain Current (Id): 7A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 670mΩ@3.5A,10V
  • Package: IPAK
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II Plus
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: STU11N
  • detail: N-Channel 650V 7A (Tc) 85W (Tc) Through Hole IPAK (TO-251)

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